document number: 93459 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 12-apr-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 power mosfet, 190 a vs-FB190SA10 vishay semiconductors features ? fully isolated package ? very low on-resistance ? fully avalanche rated ? dynamic dv/dt rating ? low drain to ca se capacitance ? low internal inductance ? optimized for smps applications ? easy to use and parallel ? industry standard outline ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level description high current density power mo sfets are paralleled into a compact, high power module providing the best combination of switching, ruggedized design, very low on-resistance and cost effectiveness. the isolated sot-227 package is preferred for all commercial-industrial applications at power dissipation levels to approximately higher than 500 w. the low thermal resistance and easy connection to the sot-227 package contribute to its universal acceptance throughout the industry. notes (1) repetitive rating; pulse width limited by maximum junction temperature. (2) starting t j = 25 c, l = 43 h, r g = 25 ? , i as = 180 a. (3) i sd ? 180 a, di/dt ? 83 a/s, v dd ? v (br)dss , t j ? 150 c. product summary v dss 100 v i d dc 190 a r ds(on) 0.0065 ? type modules - mosfet package sot-227 sot-227 absolute maximum ratings parameter symbol test conditions max. units continuous drain current at v gs 10 v i d t c = 40 c 190 a t c = 100 c 130 pulsed drain current i dm 720 power dissi pation p d t c = 25 c 568 w linear derating factor 2.7 w/c gate to source voltage v gs 20 v single pulse avalanche energy e as (2) 700 mj avalanche current i ar (1) 180 a repetitive avalanche energy e ar (1) 48 mj peak diode recovery dv/dt dv/dt (3) 5.7 v/ns operating junction and storage temperature range t j , t stg - 55 to + 150 c insulation withstand voltage (ac-rms) v iso 2.5 kv mounting torque m4 screw 1.3 nm
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93459 2 revision: 12-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-FB190SA10 vishay semiconductors power mosfet, 190 a thermal resistance parameter symbol min. typ. max. units junction to case r thjc --0.22 c/w case to heatsink, flat, greased surface r thcs -0.05- electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditio ns min. typ. max. units drain to source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 100 - - v breakdown voltage temperature coefficient ? v (br)dss / ? t j reference to 25 c, i d = 1 ma - 0.093 - v/c static drain to so urce on-resistance r ds(on) v gs = 10 v, i d = 180 a - 0.0054 0.0065 ? gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 3.3 4.35 v forward transconductance g fs v ds = 25 v, i d = 180 a 93 - - s drain to source leakage current i dss v ds = 100 v, v gs = 0 v - - 50 a v ds = 80 v, v gs = 0 v, t j = 125 c - - 500 gate to source forward leakage i gss v gs = 20 v - - 200 na v gs = - 20 v - - - 200 total gate charge q g i d = 180 a v ds = 80 v v gs = 10 v -250- nc gate to source charge q gs -40- gate to drain (" miller") charge q gd -110- turn-on delay time t d(on) v dd = 50 v i d = 180 a r g = 2.0 ??? (internal) r d = 0.27 ?? -45- ns rise time t r -351- turn-off delay time t d(off) -181- fall time t f -335- internal source inductance l s between lead, and center of die contact - 5.0 - nh input capacitance c iss v gs = 0 v v ds = 25 v f = 1.0 mhz - 10 700 - pf output capacitance c oss - 2800 - reverse transfer capacitance c rss - 1300 - source-drain ratings and characteristics parameter symbol test conditi ons min. typ. max. units continuous so urce current (body diode) i s mosfet symbol showing the integral reverse p-n junction diode. - - 190 a pulsed source current (body diode) i sm - - 740 diode forward voltage v sd t j = 25 c, i s = 180 a, v gs = 0 v - 1.0 1.3 v reverse recovery time t rr t j = 25 c, i f = 180 a, di/dt = 100 a/s - 300 - ns reverse recovery charge q rr -2.6-c forward turn-on time t on intrinsic turn-on time is negligib le (turn-on is dominated by l s + l d ) s d g
document number: 93459 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 12-apr-11 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-FB190SA10 power mosfet, 190 a vishay semiconductors fig. 1 - typical output characteristics fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature fig. 5 - typical capacitance vs. drain to source voltage fig. 6 - typical gate charge vs. gate to source voltage 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 4 5 6 7 8 9 10 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 180a 1 10 100 0 5000 10000 15000 20000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 50 100 150 200 250 300 350 400 0 5 10 15 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 180 a v = 20v ds v = 50v ds v = 80v ds
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93459 4 revision: 12-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-FB190SA10 vishay semiconductors power mosfet, 190 a fig. 7 - typical source drain diode forward voltage fig. 8 - maximum safe operating area fig. 9 - maximum drain current vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 150 c j t = 25 c j 1 10 100 1000 10000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 0 255075100 150 125 175 200 25 50 75 100 125 150 175 allowable case temperature (c) i , drain current in dc (a) d dc pulse width 1 s duty factor 0.1 % d.u.t. 10 v + - v ds r d v dd r g v gs v ds 90% 10% v gs t d(on) t r t d(off) t f
document number: 93459 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 12-apr-11 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-FB190SA10 power mosfet, 190 a vishay semiconductors fig. 11 - maximum effective transient thermal impedance, junction to case fig. 12a - unclamped inductive test circuit fig. 12b - unclampe d inductive waveforms fig. 12c - maximum avalanche energy vs. drain current fig. 13a - basic ga te charge waveform 0.01 0.1 1 0.0001 0.001 0.01 0.1 10 1 t , rectangular pulse duration (s) z thjc - thermal impedance (c/w) 1 single pulse (thermal resistance) 0.1 0.2 0.3 0.5 dc 0.75 0.01 d.u.t l + - driver a 15 v 20 v r g v ds i as t p v dd t p v (br)dss i as 25 50 75 100 125 150 0 300 600 900 1200 1500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 71a 100a 160a q g q gs q gd v g charge 10 v
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 93459 6 revision: 12-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-FB190SA10 vishay semiconductors power mosfet, 190 a fig. 13b - gate charge test circuit fig. 13c - peak diode recovery dv/dt test circuit fig. 14 - for n-channel power mosfets d.u.t. v ds i d i g 3 ma v gs 0.3 f 50 k 0.2 f 12 v current regulator same type as d.u.t. current sampling resistors + - + - + + + - - - ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t. circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer 1 2 4 3 r g v dd p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period * v gs = 5v for logic level devices *
document number: 93459 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 12-apr-11 7 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-FB190SA10 power mosfet, 190 a vishay semiconductors ordering information table circuit configuration circuit circuit configuration code circuit drawing single switch s links to related documents dimensions www.vishay.com/doc?95423 packaging information www.vishay.com/doc?95425 2 - power mosfet 1 - vishay semiconductors product 3 - generation 5 mosfet 4 - current rating (190 = 190 a) 5 - single switch 6 - package indicator (sot-227) 7 - voltage rating (10 = 100 v) device code 5 1 3 2 4 6 7 vs- f b 190 s a 10 3 (d) 2 ( g ) 4 ( s ) 1 ( s ) s(1-4) d(3) g(2) 1 ( s ) 4 ( s ) 3 2 (d) ( g ) lead a ss ignment
document number: 95423 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 15-nov-10 1 sot-227 generation ii outline dimensions vishay semiconductors dimensions in millimeters (inches) note ? controlling dime nsion: millimeter 38.30 (1.508) 37.80 (1.488) -a- 12.50 (0.492) 13.00 (0.512) 7.45 (0.293) 7.60 (0.299) ? 4.10 (0.161) ? 4.30 (0.169) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 14.90 (0.587) 15.20 (0.598) 6.25 (0.246) 6.50 (0.256) 25.70 (1.012) 24.70 (0.972) 2.10 (0.083) 2.20 (0.087) -b- r full 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 4 x 4.10 (0.161) 4.50 (0.177) -c- 0.13 (0.005) 12.30 (0.484) 11.70 (0.460) 25.00 (0.984) 25.50 (1.004) m m m 0.25 (0.010) ca b 4 x m4 nuts
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